In patterned sapphire substrate manufacturing, there are two popular processes that are being used my many semiconductor companies - the Dry and the Wet process. And because these processes differ in many ways, it is important to understand the difference between the two so that you can determine which between the two suits best to your unique needs. Consider the following:
Dry etching
- the most popular method used by manufacturing companies to etch sapphire substrates and it has a very slow process with a low throughput rate;
- a standard 2-inch wafer can consume between 30 and 60 minutes to etch;
- it does not scale effectively. As a wafer size increases, throughput of a dry etcher falls as fewer wafers fit inside the vacuum chamber. And because of that, more expensive plasma etching tools are needed to achieve the same throughput as achieved by smaller wafers;
- as an estimate, dry etching rates range between 50nm and 200nm per minute is attainable;
- dry etching is also known in producing bright and efficient LEDs; however, the process takes so slow and produces limited throughput.
Wet etching
- it has the advantage of being an extremely fast process and it can be carried out in a lot cheaper procedure than dry etching;
- it is very scalable but produces LEDs that are not quite as effective or efficient as dry etching;
- it provides a considerable cost saving than the dry etching;
- polishing touch-up work is performed on the wafers in order to increase light extraction efficiency.
Here are some equipment being used in etching sapphire:
The Accubath Xe-Series -- an etching bath equipment from Imtec Acculine, was designed with Sapphire etching in mind but we know there are other processes that will benefit from the increased chemical reactivity that higher temperatures provide (300C). Processes that were previously thought to be too slow due to temperature limitations may now be practical because of innovations like this.
Hitachi High-tech Silicon Etch System -- this equipment is capable of generating a stable high density plasma at a very low pressure; it is utilized in dry etching based on an ECR (*1) plasma source.
CDE-80N Chemical Dry Etching Equipment -- Performs chemical dry etching of thin film on a semiconductor wafer in gaseous state (dry). Damage-free etching process through perfect separation of the etching unit and plasma generating unit enables wide use in the damage removal process.
Each of the etching processes discussed above has its own advantages and disadvantages. But, just like any other processes, choose the one you think can improve your bottom-line -- net income.
Dry etching
- the most popular method used by manufacturing companies to etch sapphire substrates and it has a very slow process with a low throughput rate;
- a standard 2-inch wafer can consume between 30 and 60 minutes to etch;
- it does not scale effectively. As a wafer size increases, throughput of a dry etcher falls as fewer wafers fit inside the vacuum chamber. And because of that, more expensive plasma etching tools are needed to achieve the same throughput as achieved by smaller wafers;
- as an estimate, dry etching rates range between 50nm and 200nm per minute is attainable;
- dry etching is also known in producing bright and efficient LEDs; however, the process takes so slow and produces limited throughput.
Wet etching
- it has the advantage of being an extremely fast process and it can be carried out in a lot cheaper procedure than dry etching;
- it is very scalable but produces LEDs that are not quite as effective or efficient as dry etching;
- it provides a considerable cost saving than the dry etching;
- polishing touch-up work is performed on the wafers in order to increase light extraction efficiency.
Here are some equipment being used in etching sapphire:
The Accubath Xe-Series -- an etching bath equipment from Imtec Acculine, was designed with Sapphire etching in mind but we know there are other processes that will benefit from the increased chemical reactivity that higher temperatures provide (300C). Processes that were previously thought to be too slow due to temperature limitations may now be practical because of innovations like this.
Hitachi High-tech Silicon Etch System -- this equipment is capable of generating a stable high density plasma at a very low pressure; it is utilized in dry etching based on an ECR (*1) plasma source.
CDE-80N Chemical Dry Etching Equipment -- Performs chemical dry etching of thin film on a semiconductor wafer in gaseous state (dry). Damage-free etching process through perfect separation of the etching unit and plasma generating unit enables wide use in the damage removal process.
Each of the etching processes discussed above has its own advantages and disadvantages. But, just like any other processes, choose the one you think can improve your bottom-line -- net income.
About the Author:
Paul Drake writes a wide array of industry-related topics like etching sapphire equipment. He utilizes his years of work experience in a high tech industry in writing useful resources. To learn more about wet etching process, visit Imtec Acculine official website.
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